Characterization of EBL2 EUV exposure facility

conference paper
2017
Sligte, E. te

Putten, M. van

Molkenboer, F.T.

Walle, P. van der

Muilwijk, P.M.

Koster, N.B.

Westerhout, J.

Kerkhof, P.J.

Oostdijck, B.W.

Mulckhuyse, W.F.W.

Deutz, A.F.
TNO has built EBL2; a facility for EUV exposure testing and surface analysis. EBL2 is capable of testing EUV optics, EUV photomasks, pellicles, and other components under controlled conditions, relevant to EUV scanner and source operation at all foreseen source power nodes. The system consists of an EUV beam line coupled to an X-ray Photoelectron Spectroscopy system by an automated sample handler. The current contribution reports on the results of the qualification testing of the EUV beam line. Topics investigated include handling and position control, thermal management, a relevant gas environment, EUV irradiation and metrology, and first EUV exposures.
Topics
Contamination controlEUV exposureMetrologyPellicleXPS analysisExtreme ultraviolet lithographyMasksPosition controlSurface analysisUnits of measurementX-ray photoelectron spectroscopy
TNO Identifier
782889
Repository link
https://resolver.tno.nl/uuid:c01595be-12c1-4be2-8dbf-f7d89e4650a7
ISSN
0277786X
ISBN
9781510613744
Publisher
SPIE
Article nr.
1045027
Source title
International Conference on Extreme Ultraviolet Lithography 2017, 11-14 September 2017
Editor(s)
Itani, T.
Ronse, K.G.
Gargini, P.A.
Naulleau, P.P.
Collation
6 p.
Files