Vapor pressures of precursors for the CVD of silicon-based films

article



Alcott, G.R.

Sanden, R.M.C.M. van de

Kondic, S.

Linden, J.L.
The controlled vaporization and subsequent transport of liquid and solid precursors is an essential part of gas phase process technology. To accurately control precursor feed rate when using conventional bubbler systems, it is imperative to know the precursor vapor pressure, thermal stability, and purity. This paper reports further measurements performed using a procedure and system developed in-house designed to quantify vapor pressure, stability, and the presence of volatile contaminants.
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Chemical vapor depositionNumerical methodsSiliconThermal variables measurementThermodynamic stabilityThin filmsTransport propertiesVaporizationBistrimethyl siloxyethaneClausius-Clapeyron equationGas phase process technologyTetraethoxysilaneTripropylsilaneVapor pressure
TNO Identifier
237561
Repository link
https://resolver.tno.nl/uuid:00000000-0000-0000-0000-00000a237561
DOI
https://dx.doi.org/10.1002/cvde.200306145
ISSN
09481907
Source
Chemical Vapor Deposition, 10(1), pp. 20-22.
Pages
20-22
Files
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