Real-Time observation of EUV-induced blister formation at various sample temperatures in pellicle-like materials
conference paper
In this study, we investigated degradation mechanisms on pellicle-like, semi-Amorphous, 50 nm SiN thin films exposed to both isolated hydrogen radicals and isolated extreme ultraviolet (EUV) radiation in vacuum at temperatures of 50°C, 120°C, and 300°C. For EUV radiation, real-Time, in-situ ellipsometry monitored surface changes without reactive gases, isolating pure EUV photon effects. For isolated hydrogen radical exposure, we have not observed any chemical and morphological changes in the thin films. For isolated EUV photons exposure, results strongly depend on temperature. At 50°C, localized and limited blistering occurred, while exposure at 120°C showed no blister formation due to atomic mobility enhancing self-healing within the amorphous matrix. At 300°C, extensive blistering was driven primarily by stress at the film-substrate interface. Contrary to the conventional idea of gradual blister growth, ellipsometric imaging revealed sudden, varied-size blister formation directly linked to local EUV dosage. In-situ XPS, TOF-SIMS, NRA, optical microscopy and SEM complemented post-exposure analyses. Our findings offer critical insights into degradation mechanisms and blister formation and evolution mechanisms, enhancing the durability and reliability of pellicles and other optical components in EUV lithography, notably for ASML EUV lithography systems. © COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.
Topics
TNO Identifier
1023328
ISSN
0277786X
Publisher
SPIE
Article nr.
136860V
Source title
International Conference on Extreme Ultraviolet Lithography 2025, Monterey, 2025-09-22 through 2025-09-25
Editor(s)
Itani, T.
Ronse, K.G.
Naulleau, P.P.
Gargini, P.A.
Ronse, K.G.
Naulleau, P.P.
Gargini, P.A.
Pages
1-13
Files
To receive the publication files, please send an e-mail request to TNO Repository.