Helium-ion-beam-induced growth of 3-dimensional AFM probes
conference paper
In the past several years, AFM has been increasingly used for metrology, i.e. the measurement of roughness and width (or critical dimension) of trenches made in photoresist. However, measurements of undercut, sidewall roughness, and critical dimension have not yet been optimized in accordance to the International Technology Roadmap for Semiconductor (ITRS) recommendations. A limiting factor in the obtained accuracy is the extension of the probe-resist interaction region when the tip of an AFM probe is inserted into the trench. In order to improve the probe-surface interaction and, hence, to truly resolve 3D structures, a 3D-AFM tip needs to be developed.
Topics
TNO Identifier
1019186
Source title
Abstract from 13th International Workshop on Nanomechanical Sensing, Delft, Netherlands
Pages
105-106
Files
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