A new horizon: using heat to measure distance in high performance metrology solutions
conference paper
In a continuing quest to further reduce the minimal feature size in semiconductor devices, the need for high resolution inspection and metrology increases exponentially. In today’s process flow, wafers are taken out of the fabrication line to be inspected using tunneling electron microscopy (TEM) for high resolution, in-die metrology. However, this technique is destructive, slow and labour intensive and can therefore not be applied as an integral part of fabrication. Non-destructive alternatives, such as scanning tunneling microscopy (SEM) and scatterometry are used to complement the TEM measurements, but these cannot compete in terms of resolution, and in the case of scatterometry only result in mean parameter values. To meet the metrology requirements of today and those of the future, new inspection techniques are required that can offer subnanometer resolution, are non-destructive and offer high throughput.
TNO Identifier
1019183
Source title
13th International Workshop on Nanomechanical Sensing, NMC 2016, Delft, The Netherlands
Collation
2 p.
Files
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