128×128 InGaAs/GaAs Strained-Superlattice Photodiode Arrays for 1064 nm NIR Detection
conference paper
High-performance proof-of-concept 128×128 InGaAs/GaAs strained-layer superlattice (SLS) photodiode (PD) array, featuring 8 × 8 μm2 pixels with 2 μm interpixel gap, is demonstrated for efficient 1064 nm detection. The SLS photoabsorber design parameters are engineered using a calibrated 8-band k⋅p Schrödinger-Poisson solver, while Sentaurus-TCAD simulations guide device-level optimization for low dark-current, fast response, ∼75% quantum efficiency, and low-bias operation. Initial design implementations with conventional vertical sidewall mesas exhibit ∼60% surface leakage contribution in dense arrays. A quantum-well-intermixed tapered sidewall mesa (QWI-TSM) architecture, developed here using a low-thermal-budget Ar plasma-induced intermixing, and SU-8 passivation has helped devices reduce the surface current density contribution down to 14%. The fabricated arrays exhibit a dark current of 9 nA and QE ∼60% at −1 V, approaching commercial 1064 nm PD performance, with further gains expected through improved epitaxy. These results validate the proposed scalable InGaAs/GaAs SLS PD arrays for next-generation high-performance 1064 nm near-infrared imaging and sensing.
Topics
TNO Identifier
1017943
ISSN
1077-260X
Source
IEEE Journal of Selected Topics in Quantum Electronics, 31(5), pp. 1-9.
Publisher
IEEE
Article nr.
1900509
Pages
1-9
Files
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