Chemically Resolved IR-AFM Metrology of Sub-25 nm Half-Pitch Patterns in Self-Assembled Block Co-Polymers
article
Resist stochastics ultimately limit patterning, a result of interplay of resist composition, exposure, bake and development. Metrologies like OCD and CD-SEM only measure uniformity after development, offering limited process control. Each step modifies molecular bonds, leaving IR (5-20 μm) fingerprints in activated chemical structures. When combining IR & AFM, nearfield effects resolve alterations at the nm scale. We show how IR-AFM offers chemical selectivity and lateral resolution to resolve modifications in latent DSA and EUVL
images, even before PEB and development. Metrology data from these images facilitate improved process control.
images, even before PEB and development. Metrology data from these images facilitate improved process control.
TNO Identifier
1016628
Source
Journal of Photopolymer Science and Technology, 38(3), pp. 253-258.
Pages
253-258
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