Area selective hardmask deposition : methods and tools for advanced patterning
patent
The present inventive concept relates to area-selective deposition (ASD) area-selective atomic layer deposition (ASALD) processes, and applications thereof. Methods of selectively depositing metal oxides and metal oxynitrides, such as TiO2 and TiON, on nitride (SiN) as a growth area vs. oxide (SiO2) as a nongrowth area, and applications thereof in, for example, self-aligned block (SAB) patterning and selfaligned multiple patterning (SAMP) processes are described.
TNO Identifier
1014237
Publisher
United States Patent and Trademark Office
Article nr.
US 2025/0146128 Al
Collation
30 p.
Files
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