First characterization of ion fluxes in repetitively pulsed hydrogen plasma induced by 13.5 nm EUV radiation at the EBL2 facility
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EUV lithography systems are improving with respect to source power and productivity. The purge gas in these systems absorbs a small part of the EUV radiation, which results in a low-density plasma. We report first preliminary EUV-induced plasma measurements in the new EUV-beamline at TNO: EBL2. The EUV-induced plasma will interact with the EUV optics, reticle, pellicle and sensors in the machine, and helps to prevent carbon contamination. A more detailed description of such plasmas is required to understand the full influence on mirrors and other components. In EBL2, samples (including full-size EUV photomasks) can be exposed to EUV radiation in a controlled environment. This allows a systematic parameter study of EUV plasma. Pulsed plasma conditions with a repetition frequency of 3 kHz are characterized with a compact retarding field ion energy spectrometer, measuring time and space resolved ion flux and ion energy profiles on the chamber walls.
TNO Identifier
961380
Publisher
TNO
Source title
5th European Physical Society Conference on Plasma Physics, 2-6 July 2018, Prague, Czech Republic
Collation
1 p.
Place of publication
Delft, The Netherlands
Files
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