Integrated SiGe Detectors for Si Photonic Sensor Platforms
conference paper
In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range between 0 and −10 V, the dark current is better than 0.1 nA which is crucial for highly sensitivity devices and applications, like Optical Coherence Tomography.
TNO Identifier
875517
Publisher
MDPI
Source title
Eurosensors 2017 Conference, Paris, France, 3–6 September 2017
Collation
4 p.
Files
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