Integrated SiGe Detectors for Si Photonic Sensor Platforms
conference paper
In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range between 0 and −10 V, the dark current is better than 0.1 nA which is crucial for highly sensitivity devices and applications, like Optical Coherence Tomography.
TNO Identifier
875517
DOI
doi:10.3390/proceedings1040559
Publisher
MDPI
Source title
Eurosensors 2017 Conference, Paris, France, 3–6 September 2017
Collation
4 p.
Files
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