Power Saving through State Retention in IGZO-TFT AMOLED Displays for Wearable Applications
article
We present a qHD (960 × 540 with three sub-pixels) top-emitting active-matrix organic light-emitting diode display with a 340-ppi resolution using a self-aligned IGZO thin-film transistor backplaneon polyimide foil with a humidity barrier. The back plane processflow is based on a seven-layerphotolithography process with a CD = 4μm. We implement a 2T1C pixel engine and use a commercialsource driver IC made for low-temperature polycrystalline silicon. By using an IGZO thin-film transistorand leveraging the extremely low off current, we can switch off the power to the source and gate driverwhile maintaining the image unchanged for several minutes. We demonstrate that, depending on theimage content, low-refresh operation yields reduction in power consumption of up to 50% comparedwith normal (continuous) operation. We show that with the further increase in resolution, the powersaving through state retention will be even more significant.
TNO Identifier
865799
ISSN
1071-0922
Source
Journal of the Society for Information Display, pp. 222-228.
Publisher
Society for Information Display
Pages
222-228
Files
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