Unified Physical DC Model of Staggered Amorphous InGaZnO Transistors
article
I n this paper, we propose a unified physical model of InGaZnO [amorphous indium–gallium–zincoxide (a-IGZO)] thin-film transistors (TFTs) accounting forboth charge injection at the contact and charge transport within the channel. We extract the current-voltage characteristics of the injecting contact from the measurements of a-IGZO TFTs fabricated on plastic foil. We show that the charge injection depends on both the drain and the gate voltages.We model the charge injection in staggered a-IGZO TFTs basing on the thermionic emission–diffusion theory including the charge carrier-dependent electron velocity due to the trap states in the subgap of the a-IGZO semiconductor. Combining the charge injection model with a charge transport model, we accurately and consistently describe the measurements of staggered a-IGZO TFTs with channellength scaling from 200 µm to 15 µm. The proposed unified model is implemented in a circuit simulator and used to design unipolar inverters. The good agreement between simulations and measurements of the inverters further confirms the effectiveness of the proposed approach.
TNO Identifier
862501
ISSN
0018-9383
Source
IEEE Transactions on Electron Devices, 64(3), pp. 1076-1082.
Publisher
IEEE
Pages
1076-1082
Files
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