A Thin-Film, a-IGZO, 128b SRAM and LPROM Matrix With Integrated Periphery on Flexible Foil

article







Roose, F. De

Myny, K.

Ameys, M.

Steen, J.L.P.J. van der

Maas, J.

Riet, J. de

Genoe, J.

Dehaene, W.
A fast, 128-b implementation of both SRAM and LPROM with integrated periphery in a thin-film amorphous indium–gallium–zinc oxide technology is reported. The SRAM block can be read in 265 µs/byte and written in 110 µs/byte, consumes 12.3 mW, and has an area of 11.9 mm2. Furthermore, after power down, an SRAM memory state retention time of 83 s is shown. The LPROM can be read in 40 µs/b, consumes 4.50 mW, and has an area of 3.75 mm2. The SRAM enables fast volatile RAM memory for thin-film microprocessors, while the LPROM can be used to store the identification code for state-of-the-art thin-film RFID tags.
Topics




Amorphous indium–gallium–zinc oxide (a-IGZO)Laser programmable ROMMemory on foilSRAMThin-film design
TNO Identifier
862353
Repository link
https://resolver.tno.nl/uuid:0b82660e-efd4-4322-8dd7-1b3ab1d6701c
ISSN
0018-9200
Source
IEEE Journal of Solid-State Circuits, 52(11), pp. 3095-3103.
Publisher
IEEE
Collation
9 p.
Pages
3095-3103
Files
To receive the publication files, please send an e-mail request to TNO Repository.