Cu-Sn transient liquid phase wafer bonding Process parameters influence on bonded interface quality

conference paper
Cu-Sn Transient Liquid Phase (TLP) wafer-level bonding is an interesting solution for wafer-to-wafer stacking technologies, due to its compatibility with 3D interconnections as well as vacuum sealing applications. The work presented here is analysing typical Cu-Sn TLP wafer bonding issues as occurrence of voids, bonded wafers pair bow and incomplete layer transformation with respect to process parameters as maximum bonding temperature, bonding time and contact (bonding) pressure. © The Electrochemical Society.
TNO Identifier
954325
ISSN
19385862
ISBN
9781607683551
Source title
ECS Transactions, 12th International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications - ECS Fall 2012 Meeting, 7 October 2012 through 12 October 2012
Pages
177-188
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