Back-channel-etch amorphous indium–gallium–zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation
article
We report on the impact of source/drain (S/D) metal (molybdenum) etch and the final passivation (SiO2) layer on the bias-stress stability of backchannel-etch (BCE) configuration based amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs). It is observed that the BCE configurations TFTs suffer poor bias-stability in comparison to etch-stop-layer (ESL) TFTs. By analysis with transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS), as well as by a comparative analysis of contacts formed by other metals, we infer that this poor bias-stability for BCE transistors having Mo S/D contacts is associated with contamination of the back channel interface, which occurs by Mo-containing deposits on the back channel during the final plasma process of the physical vapor deposited SiO2 passivation.
Topics
TNO Identifier
868262
DOI
https://dx.doi.org/10.7567/JJAP.53.111401
ISSN
00214922
Source
Japanese Journal of Applied Physics
Publisher
IOP
Article nr.
111401
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