A Switch-Bank Approach for High-Power, High-Resolution, Fully-Digital Transmitters
conference paper
An implementation strategy for high-power, high-resolution, fully digital transmitters (DTX) is proposed. It is based on a high-speed CMOS controller featuring a high-density flip-chip interconnect to an LDMOS power MMIC containing large arrays of custom low-VT LDMOS gate segments configured in RF-power switch banks. Using a two-level thermometer approach and a novel symmetric control scheme for the activation of the gate segments, a high-resolution 11-bit DTX switch bank is realized. It can provide peak RF powers > 10 W at 45%/40% peak drain/system efficiency at 3.525 GHz.
TNO Identifier
1001724
Publisher
IEEE
Source title
Proceedings of the 54th European Microwave Conference, Paris France
Pages
23-26
Files
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