A capacitive probe with shaped probe bias for ion flux measurements in depositing plasmas

article





Petcu, M.C.

Bronneberg, A.C.

Sarkar, A.

Blauw, M.A.

Creatore, M.

Sanden, M.C.M. van de
The application of a pulse shaped biasing method implemented to a capacitive probe is described. This approach delivers an accurate and simple way to determine ion fluxes in diverse plasma mixtures. To prove the reliability of the method, the ion probe was used in a different configuration, namely, a planar Langmuir probe. In this configuration, the ion current was directly determined from the I-V characteristic and compared with the ion current measured with the pulse shaped ion probe. The results from both measurements are in excellent agreement. It is demonstrated that the capacitive probe is able to perform spatially resolved ion flux measurements under high deposition rate conditions (2-20 nm/s) in a remote expanding thermal plasma in Ar / NH3 / SiH4 mixture.
Topics














Plasma depositionSilanesBiasing methodsCapacitive probesExpanding thermal plasmasHigh deposition ratesIon currentsIon fluxesIon probesPlanar langmuir probesSpatially resolvedElectric power suppliesElectron probe microanalysisReference standardsSilicon compounds
TNO Identifier
461669
Repository link
https://resolver.tno.nl/uuid:1cf6d90c-049e-43ff-ab06-0948c5df35a1
ISSN
00346748
Source
Review of Scientific Instruments, 79(11)
Publisher
American Institute of Physics AIP
Article nr.
115104
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