Characteristics improvement of top-gate self-aligned amorphous indium gallium zincoxide thin-film transistors using a dual-gate control
article
In this work, we have reported dual-gate amorphous indium gallium zinc oxide thin-filmtransistors (a-IGZO TFTs), where a top-gate self-aligned TFTs has a secondary bottom gate and the TFTintegration comprises onlyfive mask steps. The electrical characteristics of a-IGZO TFTs under differentgate control are compared. With the enhanced control of the channel with two gates connected together,parameters such as on current (ION), sub-threshold slope (SS1), output resistance, and bias-stressinstabilities are improved in comparison with single-gate control self-aligned a-IGZO TFTs. We have alsoinvestigated the applicability of the dual-gate a-IGZO TFTs in logic circuitry such as 19-stage ringoscillators
TNO Identifier
865798
ISSN
1071-0922
Source
Journal of the Society for Information Display, pp. 623-626.
Publisher
Society for Information Displa
Pages
623-626
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