Charge Transport in Organic Transistors Accounting for a Wide Distribution of Carrier Energies—Part II: TFT Modeling
article
A physically based analytical model of the drain current of an organic thin-film transistor is proposed. It is compared with the measurements collected from transistors made with
different gate insulators, organic semiconductors, and fabrication processes. The extracted model parameters provide quantitative information on the charge transport in the active layer of the transistor. The analysis suggests that the tail states are an intrinsic property of the organic semiconductor, whereas the deep states arise from the interaction between the semiconductor and the gate insulator. The relative importance of tail and deep localized states is related to the operating regions of the transistor. The resulting mathematical expressions are simple and suitable for computer-aided design implementation.
different gate insulators, organic semiconductors, and fabrication processes. The extracted model parameters provide quantitative information on the charge transport in the active layer of the transistor. The analysis suggests that the tail states are an intrinsic property of the organic semiconductor, whereas the deep states arise from the interaction between the semiconductor and the gate insulator. The relative importance of tail and deep localized states is related to the operating regions of the transistor. The resulting mathematical expressions are simple and suitable for computer-aided design implementation.
Topics
TNO Identifier
868340
ISSN
0018-9383
Source
IEEE Transactions on Electron Devices, 59(5), pp. 1520-1528.
Publisher
IEEE
Pages
1520-1528
Files
To receive the publication files, please send an e-mail request to TNO Repository.