Flexible thin-film transistors using multistep UV nanoimprint lithography
article
A multistep imprinting process is presented for the fabrication of a bottom-contact, bottom-gate thin-film transistor (TFT) on poly(ethylene naphthalate) (PEN) foil by patterning all layers of the metal–insulator–metal stack by UV nanoimprint lithography (UV NIL). The flexible TFTs were fabricated on a planarization layer, patterned in a novel way by UV NIL, on a foil reversibly glued to a Si carrier. This planarization step enhances the dimensional stability and flatness of the foil and thus results in a thinner and more homogeneous residual layer. The fabricated TFTs have been electrically characterized as demonstrators of the here developed fully UV NIL-based patterning process on PEN foil, and compared to TFTs made on Si with the same process. TFTs with channel lengths from 5 lm down to 250 nm have been fabricated on Si and PEN foil, showing channel lengthdependent charge carrier mobilities, l, in the range of 0.06–0.92 cm2 V1 s1 on Si and of 0.16–0.56 cm2 V1 s1 on PEN foil.
Topics
TNO Identifier
868338
ISSN
3004-3013
Source
Organic Electronics, 13, pp. 3310-3314.
Pages
3310-3314
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