Ultrafast atomic layer deposition of alumina layers for solar cell passivation
article
An ultrafast atomic layer deposition technique is presented, based on the spatial separation of the half-reactions, by which alumina layers can be deposited with deposition rates of more than 1 nm/s. The deposition rate is limited by the water half-reaction, for which a kinetic model has been developed. The alumina layers showed excellent passivation of silicon wafers for solar cell applications. Based on this concept, a high-throughput ALD deposition tool is being developed targeting throughput numbers of up to 3000 wafers/h.
TNO Identifier
434665
ISSN
00134651
Source
Journal of the Electrochemical Society, 158(9), pp. H937-H940.
Pages
H937-H940
Files
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