Comparative Study of the Resolution of Ge-on-Si Photodetectors for 1 μm Infrared Signals
conference paper
Most of the studies on narrow-band nearinfrared detection reported so far are related to the 1.3 μm and 1.55 μm spectral windows. There is insufficient research work done on radiation detection in the narrow band around 1 μm wavelength, which is just outside the Si (0.95 μm) and GaAs (0.85 μm) effective cut-off spectral sensitivity. This paper presents a p+n Ge-on-Si detector with a customized large active window, employing the PureGaB technology, to detect radiation in a very narrow band around 1 μm. The advantages of the proposed detector are: (1) CMOS-compatibility and microspectroscopic capability; (2) low dark current and high photoresponsivity, compared to similar devices reported in the literature; (3) enhanced sensitivity to weak radiation by realizing an ultra-shallow and very thin depletion region. These detectors can be good candidates for measuring the YAG laser radiation and measuring stray radiation in photolithography.
TNO Identifier
986702
ISBN
979-8-3503-9806-9
Publisher
IEEE
Source title
2022 IEEE 1st Industrial Electronics Society Annual On-Line Conference (ONCON), Kharagpur, India, 9-11 December 2022
Collation
6 p.
Files
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