High Performance Stacked-FETs in 0.25 µm GaN Technology for S-band Power Amplifiers
conference paper
In this article the feasibility and benefits of tacked-FET structures in a state-of-art GaN technology are investigated. Trade-offs between output power, efficiency and stability are made to yield stable, high performance devices. The results of three S-band GaN stacked-FET structures in the UMS GH25-10 technology are given. These structures are designed for drain voltages levels of 60 V or higher, which is (more than)twice the nominal drain voltage for this technology. It is shown that power level above 5 W/mm with PAE levels above 60 % are achieved. The obtained results are translated to power amplifier
performance estimations showing the potential of these structures.
performance estimations showing the potential of these structures.
TNO Identifier
977842
Source title
52nd European Microwave Conference (EuMC)27–29 September 2022, Milan, Italy
Files
To receive the publication files, please send an e-mail request to TNO Repository.