Final public report Momentum
report
: Excellent passivating contacts can be made based on doped silicon and silicon alloys, either a-Si:H or poly Si. However, the limited transparency of these contacts induces absorption losses at the front side, or restricts their use to the rear side of the cell. This limitation has initiated many investigations on more advanced, often inherently also more expensive, front side processing steps. These include looking into advanced metallization, selective or deep emitters or switch to more complex interdigitated back contact (IBC) patterning of doped poly-Si contacts at the rear side of the cells. Since 2013, novel passivating contact materials based on transition metal oxides (TMOs), like MoOx and TiOx, have been emerging as well as a wide variety of other materials. Passivating contacts form full-area surface passivation, which leads to high cell voltages. Moreover, cells with TMO based passivating contacts display high transparency and enable low-cost processing compared to their silicon-based counterparts. This makes these structures uniquely suited for the front side. However, more R&D is required to exploit their full potential towards >25% efficient solar cells.
Topics
TNO Identifier
977452
Publisher
TNO
Collation
6 p.
Place of publication
Petten