Characterization of GaN Recovery Effects under High-Power Pulsed RF Stress
conference paper
This paper discusses the characterization of GaN
transistors or MMICs under pulsed high-power stress and their
recovery behaviour. A fully calibrated measurement setup is
introduced where both forward and reflected waves are measured
at input and output. In particular, also the effect of trapping due
to the RF pulse on for example the insertion phase or input
impedance can be measured. Measurement examples are shown
on transistors from two different GaN technologies and compared
to measurements on a GaAs transistor. Recovery measurements
on GaN transistors in series and shunt configuration have been
performed, showing in-depth the effects relevant for application of
these devices in array environments.
transistors or MMICs under pulsed high-power stress and their
recovery behaviour. A fully calibrated measurement setup is
introduced where both forward and reflected waves are measured
at input and output. In particular, also the effect of trapping due
to the RF pulse on for example the insertion phase or input
impedance can be measured. Measurement examples are shown
on transistors from two different GaN technologies and compared
to measurements on a GaAs transistor. Recovery measurements
on GaN transistors in series and shunt configuration have been
performed, showing in-depth the effects relevant for application of
these devices in array environments.
TNO Identifier
972568
Publisher
IEEE European Microwave Week 2022 25-30 september 2022
Files
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