A High-Mobility Hole Bilayer in a Germanium Double Quantum Well
article
A hole bilayer in a strained germanium double quantum well is designed, fabricated, and studied. Magnetotransport characterization of double quantum well field-effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of 3.34 × 105 cm2 V−1 s−1 and a low percolation density of 2.38 × 1010 cm−2. The individual population of the channels from the interference patterns of the Landau fan diagram was resolved. At a density of 2.0 × 1011 cm−2 the system is in resonance and an anti-crossing of the first two bilayer subbands is observed and a symmetric-antisymmetric gap of ≈ 0.69 meV is estimated, in agreement with Schrödinger-Poisson simulations.
TNO Identifier
968347
Source
Advanced Quantum Technology
Publisher
Wiley
Collation
5 p.
Place of publication
New York, NY, USA
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