Lightly strained germanium quantum wells with hole mobility exceeding one million
article
We demonstrate that a lightly-strained germanium channel ("// = −0.41%) in an undoped Ge/Si0.1Ge0.9 heterostructure field effect transistor supports a 2D hole gas with mobility in excess of 1 × 106 cm2/Vs and percolation density less than 5 × 1010 cm−2. This low disorder 2D hole system shows tunable fractional quantum Hall effect at low density and low magnetic field. The low-disorder and small effective mass (0.068me) defines lightly-strained germanium as a basis to tune the strength of the spin-orbit coupling for fast and coherent quantum hardware.
Topics
TNO Identifier
967484
ISSN
00036951
Source
Applied Physics Letters, 120(12)
Publisher
American Institute of Physics AIP
Article nr.
122104
Collation
6 p.
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