Method for removing a contamination layer by an atomic layer etching process
patent
A method for at least partially removing a contamination layer (24) from an optical surface (14a) of an optical element (14) that reflects EUV radiation includes: performing an atomic layer etching process for at least partially removing the contamination layer (24) from the optical surface (14a), which, in tum, includes: exposing the contamination layer (24) to a surface-modifying reactant (44) in a surface modification step, and exposing the contamination layer (24) to a material-detaching reactant ( 45) in a material detachment step. The optical element (14) is typically taken, before the atomic layer etching process is performed, from an optical arrangement, in particular from an EUV lithography system, in which the optical surface (14a) of the optical element (14) is exposed to EUV radiation (6), during which the contamination layer (24) is formed.
TNO Identifier
962039
Publisher
US Patent Office
Article nr.
US 11,199,363 B2
Collation
16 p.
Files
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