Excellent Passivation of n-Type Silicon Surfaces Enabled by Pulsed-Flow Plasma-Enhanced Chemical Vapor Deposition of Phosphorus Oxide Capped by Aluminum Oxide

article






Melskens, J.

Theeuwes, R.J.

Black, L.E.

Berghuis, W.J.H.

Macco, B.

Bronsveld, P.C.P.

Kessels, W.M.M.
Topics




Aluminum oxideChemical vapor depositionPhosphorus oxideSiliconSurface passivation
TNO Identifier
957636
Repository link
https://resolver.tno.nl/uuid:87ccb5ac-047d-4cd2-b81b-37e06181cf64
ISSN
18626254
Source
Physica Status Solidi - Rapid Research Letters, 15(January 2021)
Publisher
Wiley
Article nr.
2000399
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