Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors

article







Simicic, M.

Ashif, N.R.

Hellings, G.

Chen, S.H.

Nag, M.

Kronemeijer, A.J.

Myny, K.

Linten, D.
The thin-film-transistor (TFT) technology has attracted significant attention in account of the possibility to manufacture transistors on large and flexible substrates, at low processing temperatures and at a low cost. Next to the well-established amorphous silicon TFT technology used mostly for displays, the amorphous Indium-Gallium-Zinc-Oxide (IGZO) and Indium-Tin-Zinc-Oxide (ITZO) materials offer a higher current conductivity and thus a better performance. This makes them interesting candidates for TFT integrated circuits also beyond displays. However, integrated circuits can be easily damaged by electrostatic discharges (ESD) and require integrated protection solutions. To find possible vulnerabilities and solutions, this paper analyzes ESD robustness of two IGZO and one ITZO TFT device architecture.
Topics







Electrostatic dischargeESDIGZOIndium-gallium-zinc-oxideIndium-tin-zinc-oxideITZOTFTThin film transistors
TNO Identifier
955300
Repository link
https://resolver.tno.nl/uuid:424a8c1d-a75b-4ed5-81a4-d8db8805667d
ISSN
00262714
Source
Microelectronics Reliability, 108
Publisher
Elsevier Ltd
Article nr.
113632
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