Toward temperature tracking with unipolar metal-oxide thin-film SAR C-2C ADC on Plastic
article
The maturity of metal–oxide thin-film transistors (TFT) highlights opportunities to develop robust and low-cost electronics on flexible and stretchable substrates over large area in an industry-compatible technology. Internet-ofEverything applications with sensor nodes are driving the development of analog-to-digital converters (ADCs). In this paper, a self-biased and self-digital-controlled successive approximation ADC with integrated references and sensor read-in circuitry together with a printed negative temperature coefficient (NTC) sensor using unipolar dual-gate metal–oxide (InGaZnO) TFTs is demonstrated. The system is operated at a clock of up to 400 Hz and a total power dissipation of 245 mW (73 µW from analog) at a maximum power supply of 30 V is measured. The radio-frequency identification-ready ADC comprises of a total of 1394 indium–gallium–zinc oxide TFTs and 31 metal–insulator–metal capacitors. A figure of merit of 26 nJ/c.s. is achieved from the ADC driven from external microcontroller. The robustness of the various blocks of the chip is characterized and the yield is discussed.
Topics
TNO Identifier
954976
ISSN
00189200
Source
IEEE Journal of Solid-State Circuits, 53(8), pp. 2263-2272.
Publisher
Institute of Electrical and Electronics Engineers Inc.
Pages
2263-2272
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