An S-band 34dBm Stacked-HBT Phase Driver in 0.25?m BiCMOS Technology for GaN-Based Phased-Array Radar Transmit Chain
conference paper
This paper describes an integrated S-band phaseshifter driver-amplifier to drive Gallium-Nitride (GaN) based power amplifiers in a phased-array radar transmit chain. This phase driver is implemented in a 0.25μm SiGe BiCMOS process and packaged into a QFN5x5. By using device stacking, the phase driver achieves an output power of more than 32.5dBm (1.7W) across the band (2.6-3.4GHz), with a maximum of 34.2dBm (2.7W). The RMS phase error is less than 3.75° at a 6-bit phase resolution. This enables a low-cost highly-integrated transmitter front-end for phase-array radar applications.
TNO Identifier
953196
Publisher
IEEE
Source title
European Microwave Integrated Circuits Conference 2021
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