Control over the Gallium Depth Profile in 30x30 cm2 Sequentially Processed CIGS
conference paper
In order to control the bandgap profile of CIGSe absorbers, several key parameters of the absorber formation process have been investigated using semi-industrial 30×30 cm2 chalcogenization equipment. It was found that the degree of gallium-indium interdiffusion depends on the thermal budget of the process and on the selenium vapor pressure at the utilized high process temperature. Additionally, it depends on the copper and sodium content of the precursor. As a result, the gallium depth profile could accurately be controlled and the minimum bandgap could be varied between 1.02 eV and 1.13 eV.
TNO Identifier
952485
ISSN
01608371
ISBN
978-172816115-0
Publisher
IEEE
Article nr.
9300963
Source title
Conference Record of the IEEE Photovoltaic Specialists Conference
Pages
0640-0645
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