Single-Chip 100-Watt S-band Power Amplifier in 0.25 um GaN HEMT MMIC Technology
conference paper
A 100 W single chip GaN HPA for radar applications is designed, manufactured and measured. This HPA delivers a peak output power of 107 W at a PAE of more than 55 %. The operational equency band of the HPA is from 2.9 GHz to 3.4 GHz. High quality non-linear transistor models and advanced simulations of RF performance, amplifier stability and thermal behaviour have led to a first-time-right design.
TNO Identifier
946802
Publisher
IEEE
Source title
Proceedings of the 15th European Microwave Integrated Circuits Conference
Pages
21-24
Files
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