Insights on the electronic parameterisation of defects in silicon obtained from the formation of the defect repository
conference paper
Defects in semiconductors have been studied for over 60 years. In this time there has been significant progress
in measuring and understanding of these defects. This development has led to various types of defect parameters being
reported. A large proportion of these are not suitable to accurately determine the impact of a defect on the
performance/lifetime of a device. This paper outlines these developments and different values that have been reported. It then
suggests a path so that the correct values important for lifetime can be determined.
in measuring and understanding of these defects. This development has led to various types of defect parameters being
reported. A large proportion of these are not suitable to accurately determine the impact of a defect on the
performance/lifetime of a device. This paper outlines these developments and different values that have been reported. It then
suggests a path so that the correct values important for lifetime can be determined.
Topics
TNO Identifier
875653
Source title
36th European Photovoltaic Solar Energy Conference and Exhibition, Marseille, France
Pages
1-4
Files
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