High-efficiency crystalline silicon solar cell architectures
conference paper
This article presents recent approaches for achieving high conversion efficiency
of crystalline silicon solar cells at Delft University of Technology. The new
approaches are based on heterojuction interfaces between the crystalline silicon
(c-Si) absorber and carrier-selective passivating contact layers. We discuss
silicon heterojunction solar cells with carrier-selective contact based on thin
layers of hydrogenated amorphous silicon (a-Si:H) and on hydrogenated
polycrystalline silicon (poly-Si) combined with a ultrathin silicon oxide layer.
Both, the application of carrier-selective contacts in c-Si front-back contacted
(FBC) and interdigitated back-contacted (IBC) solar cells with different thermal
budgets are shown. The best performance was demonstrated with IBC c-Si solar
cells with poly-Si carrier-selective passivating contacts with conversion efficiency
of crystalline silicon solar cells at Delft University of Technology. The new
approaches are based on heterojuction interfaces between the crystalline silicon
(c-Si) absorber and carrier-selective passivating contact layers. We discuss
silicon heterojunction solar cells with carrier-selective contact based on thin
layers of hydrogenated amorphous silicon (a-Si:H) and on hydrogenated
polycrystalline silicon (poly-Si) combined with a ultrathin silicon oxide layer.
Both, the application of carrier-selective contacts in c-Si front-back contacted
(FBC) and interdigitated back-contacted (IBC) solar cells with different thermal
budgets are shown. The best performance was demonstrated with IBC c-Si solar
cells with poly-Si carrier-selective passivating contacts with conversion efficiency
Topics
TNO Identifier
875642
Source title
ASDAM 2018 Smolenice Castle, Slovakia, 21-24 October 2018
Pages
1-6
Files
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