Germanium Quantum-Well Josephson Field-Effect Transistors and Interferometers

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Vigneau, F.

Mizokuchi, R.

Colao Zanuz, D.

Huang, X.

Tan, S.

Maurand, R.

Frolov, S.

Sammak, A.

Scappucci, G.

Lefloch, F.

Franceschi, S. de
Hybrid superconductor−semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve the realization of topological superconducting systems as well as gate-tunable superconducting quantum bits. Here, we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting high-mobility two-dimensional holes and aluminum superconducting leads to realize prototypical hybrid devices, such as Josephson field-effect transistors (JoFETs) and superconducting quantum interference devices (SQUIDs). We observe gate-controlled supercurrent transport with Ge channels as long as one micrometer and estimate the induced superconducting gap from tunnel spectroscopy measurements. Transmission electron microscopy reveals the diffusion of Ge.
Topics




Superconducting quantum interference deviceTwo-dimensional hole gasProximity-effect-induced superconductivityJosephson field-effect transistorGe quantum well
TNO Identifier
875356
Repository link
https://resolver.tno.nl/uuid:71e4306e-d626-4076-a0a5-2fb33d7590c8
Source
Nano Letters, 19, pp. 1023-1027.
Publisher
American Chemical Society ACS
Collation
5 p.
Place of publication
Washington DC, USA
Pages
1023-1027
Files
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