Screening of Integrated GaAs Stacked-FET Power Amplifiers
conference paper
The manufacturing of radar front-ends is preferably performed with components that are fully tested and known to be functional. This decreases the chances of instant failure or rapid degradation of the system. Complete testing of the RF-performance of the individual MMICs, however, is not always possible due to technical, infrastructural or financial limitations. A good alternative is the screening of several DC parameters that are relevant for a reliable operation. Commonly used parameters for this DC-screening are the pinch-off voltage and off-state breakdown voltage of the transistors. To measure these parameters on all transistors, access is required to the gate, drain and source terminals of these transistors. In a Stacked-FET amplifier not all transistors terminals are directly accessible via DC pads and the inclusion of extra pads will result in a significantly larger layout. The goal therefore is to measure the DC behaviour without the need for extra DC pads. In this article methods are developed to support this goal. © 2019 European Microwave Association (EuMA).
Topics
TNO Identifier
871867
ISBN
9782874870552
Publisher
Institute of Electrical and Electronics Engineers Inc.
Article nr.
8910885
Source title
2019 49th European Microwave Conference, EuMC 2019, 49th European Microwave Conference, EuMC 2019, 1 October 2019 through 3 October 2019
Pages
908-911
Files
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