Area-selective atmospheric-pressure spatial ALD of SiO2 using interleaved back-etch steps yielding selectivity > 10 nm
other
TNO Identifier
869570
Publisher
TNO
Article nr.
abstract G02-1138
Source title
236th ECS Meeting, Atlanta, Oct. 13-17, 2019
Collation
21 p.
Files
To receive the publication files, please send an e-mail request to TNO Repository.