New insights into the thermally activated defects in n-type float-zone silicon
conference paper
Float-zone silicon has been long assumed to be bulk defect free and stable. Nevertheless, recently it was found that upon annealing between 450 °C to 700 °C detrimental defects can be activated in this material. Previous studies via deep level transient spectroscopy have identified several defect levels. However, it is still not clear which of these levels have a substantial impact on the minority carrier lifetime. In this study, we determine the recombination parameters of the dominant defect level using a combination of deep level transient spectroscopy and temperature and injection dependent lifetime spectroscopy. Additionally, we investigated the effect of hydrogenation on the thermally activated defects in ntype float-zone silicon. © 2019 American Institute of Physics Inc. All rights reserved.
Topics
TNO Identifier
869341
ISSN
0094243X
ISBN
9780740000000
Publisher
American Institute of Physics Inc.
Article nr.
140014
Source title
AIP Conference Proceedings, 9th International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2019, 8 April 2019 through 10 April 2019
Pages
1-7