Flexible 16nJ/c.s. 134S/s 6b MIM C-2C ADC using Dual Gate Self-aligned Unipolar Metal-Oxide TFTs

conference paper
2019
Papadopoulos, N.

Steudel, S.

Kronemeijer, A.J.

Ameys, M.

Myny, K.
Topics
Gallium compoundsII-VI semiconductorsMetal insulator boundariesMetalsMIM devicesSemiconducting indium compoundsThin film transistorsAnalog to digital convertersFigure of merit (FOM)Flexible substrateIndium gallium zinc oxidesMetal insulator metalsPolymeric substrateSampling ratesSuccessive approximationsAnalog to digital conversion
TNO Identifier
868619
Repository link
https://resolver.tno.nl/uuid:1c4ebd9e-35e6-4cea-ac20-bf18b7d15cfd
ISSN
08865930
ISBN
978-153869395-7
Publisher
Institute of Electrical and Electronics Engineers Inc.
Article nr.
8780122
Source title
Proceedings of the Custom Integrated Circuits Conference, 40th Annual IEEE Custom Integrated Circuits Conference, CICC 2019, 14 April 2019 through 17 April 2019
Files
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