Area-selective deposition of SiO2 based on spatial ALD with interleaved etching steps to obtain high selectivity
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Area-selective atomic layer deposition (AS-ALD) has the potential for pushing device manufacturing towards new frontiers. However, the selectivity that can be obtained is often very limited and the throughput of most AS-ALD methods is low, which hampers its industrial acceptance.[1,2] In this work, we present a process for AS-ALD of SiO2 using intermittent plasma etching steps to increase the selectivity above 10 nm.[3] The deposition process itself is performed in a spatial ALD mode at atmospheric pressure that allows for achieving high throughput.[4] AS-ALD of SiO2 on a pre-patterned substrate with SiO2 and ZnO was demonstrated using a chemoselective inhibitor that chemisorbs preferentially on the nongrowth area (ZnO) while it allows for depositing SiO2 on the growth area (SiO2). In order to obtain high selectivity, a blanket fluorocarbon plasma etching step was interleaved after every 110 ALD cycles.
TNO Identifier
868215
Publisher
TNO
Source title
19th International Conference on Atomic Layer Deposition and 6th International Atomic Layer Etching Workshop, Bellevue, WA, USA, 21-24 July 2019
Collation
1 p.
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