Large‐area spatial atomic layer deposition of amorphous oxide semiconductors at atmospheric pressure
article
Indium gallium zinc oxide (IGZO) is deposited using plasma-enhanced spatial atomic layer deposition (sALD) on substrates as large as 32 × 35 cm2. Excellent uniformity and thickness control leads to high-performing and stable coplanar top-gate self-aligned (SA) thin-film transistors (TFTs). The integration of a sALD-deposited aluminum oxide buffer layer into the TFT stack further improves uniformity and stability. The results demonstrate the viability of atmospheric sALD as a novel deposition technique for the flat-panel display industry.
TNO Identifier
868178
ISSN
1938-3657
Source
Journal of the Society for Information Display, 27(5), pp. 304-312.
Publisher
Wiley ; Society for Information Display
Article nr.
jsid.783
Pages
304-312
Files
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