3D Advance Metrology by means of 3D Atomic Force Microscopy
other
We developed a new 3D-AFM technique that enables imaging of high aspect ratio trenches. By measuring both lateral and vertical forces on a cantilever tip, a subharmonic mode based on the attractive tip-sample forces becomes feasible. This enables the measurement of true 3D information of samples without causing damage. This is especially relevant for semiconductor metrology, as current solutions are lagging behind the development of (near-future) lithography capabilities. Our goal: measure metrology parameters such as critical dimension (CD), side wall angle (SWA), Line edge Roughness (LER), etc.
Topics
TNO Identifier
867637
Publisher
TNO
Source title
SID Semicon Innovation Day, Science Centre Delft, 21 May 2019
Collation
1 p.
Place of publication
Delft
Files
To receive the publication files, please send an e-mail request to TNO Repository.