Miracle: Material Independent Rear Passivating Contact Solar cells using optimized texture and novel p+poly-Si hydrogenation
conference paper
A record low surface recombination current for boron doped p+poly-Si passivation on random pyramid textured Cz wafers(Jo,s of 10 fA/cm2) has been achieved, with an outlook to even lower Jo,s values. Solar cells have been completed using a lowcost process flow based on screen-printed and firing-through metallization and with a process flow that is applicable to both n-type and p-type c-Si wafers. The cells have a uniform p+poly-Si backside passivation including passivating contacts and a local n+poly-Si passivating contact on the front. A first batch of 6 inch cells prepared with these passivating contacts and low-cost processing yielded efficiencies up to 20.1%.
TNO Identifier
861674
ISBN
9781538685297
Publisher
Institute of Electrical and Electronics Engineers IEEE
Article nr.
8547969
Source title
IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018, a Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, 10-15 June 2018, Waikoloa, HI, USA
Collation
5 p.
Pages
3900-3904
Files
To receive the publication files, please send an e-mail request to TNO Repository.