Raman analysis of Cu(In,Ga)(Se,S)2 absorbers obtained from atmospheric selenium-sulfur annealing of electrodeposited precursors
conference paper
Two step atmospheric pressure processing of Cu(In,Ga)(Se,S)2 absorbers is an industrially attractive technology to produce CIGS thin film modules. For this procedure, absorber sulfurization is required to increase the Voc and thus the efficiency of the solar cells. Raman spectroscopy was used to qualitatively identify the presence of sulfur on the surface of the absorber. Moreover WDXRF and GDOES were used to quantitavely determine the sulfur content in the top of the absorbers. These results were used to globally quantify the Raman results. © 2018 IEEE.
Topics
TNO Identifier
861671
ISBN
9781538685297
Publisher
Institute of Electrical and Electronics Engineers Inc.
Article nr.
8547280
Source title
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, 10 June 2018 through 15 June 2018
Pages
170-175
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