Atmospheric Pressure Spatial ALD Layer for Ambient, Thermally and Light Stable p-i-n Planar Perovskite Solar Cells
conference paper
In order to bring the organo-lead halide perovskite solar cells (PSC) towards the commercialization, the device stability needs to be drastically improved. Our approach relies on the introduction of a compact metal oxide (MeO) layer in a p-i-n planar architecture by means of atmospheric pressure spatial atomic layer deposition (s-ALD) technique. The presence of this additional layer improves the stability towards the ambient environment as well as during a thermal stress test carried out at 85°C. Furthermore, we observe that replacing the top metal contact with a sputtered ITO electrode can prolong the device stability both under thermal and light soaking tests. © 2018 IEEE.
Topics
Spatial ALDTop electrodeAtmospheric pressureConvergence of numerical methodsElectrodesEnergy conversionLead compoundsMetalsPerovskitePerovskite solar cellsSolar cellsStabilityAmbient environmentDevice stabilityITO electrodesLight soakingMetal contactsMetal oxidesPlanar architectureAtomic layer deposition
TNO Identifier
861669
ISBN
9781538685297
Publisher
Institute of Electrical and Electronics Engineers Inc.
Article nr.
8548089
Source title
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion, WCPEC 2018 - A Joint Conference of 45th IEEE PVSC, 28th PVSEC and 34th EU PVSEC, 7th IEEE World Conference on Photovoltaic Energy Conversion, WCPEC 2018, 10 June 2018 through 15 June 2018
Pages
3514-3517
Files
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