EM - Based GaN Transistor Small-Signal Model Scaling
conference paper
A small-signal model of a Gallium Nitride (GaN) Field Effect Transistor (FET) is created which consists of a compact linear model of the intrinsic gate fingers and an Electro-Magnetic (EM)-based model of the extrinsic part. Accurate scaling of transistor size is obtained which means that larger transistors than supported by standard (foundry) models can be used. Successful scaling is demonstrated up to a transistor size suitable for the design of a High Power Amplifier (HPA) at S-band. This method of modelling also increases the flexibility with respect to transistor connections and additional layers such as die-coat can be included in the EM stack. © 2018 European Microwave Association - EuMA.
Topics
Electromagnetic modellingPower transistorsSemiconductor device modellingField effect transistorsIII-V semiconductorsMicrowave integrated circuitsPower amplifiersWide band gap semiconductorsElectromagnetic modellingGallium Nitride (GaN)Gan transistorsGate fingersHigh power amplifierLinear modelingSmall signal modelTransistor size
TNO Identifier
858056
ISBN
9782874870521
Publisher
Institute of Electrical and Electronics Engineers Inc.
Article nr.
8539925
Source title
EuMIC 2018 - 2018 13th European Microwave Integrated Circuits Conference, 13th European Microwave Integrated Circuits Conference, EuMIC 2018, 24 September 2018 through 25 September 2018
Pages
134-137
Files
To receive the publication files, please send an e-mail request to TNO Repository.