Full size IBC module based on industrially processed 95 μm thin cells with a CtM power loss < 1%

conference paper
2018
Sommeling, P.

Kroon, J.

Guillevin, N.

Okel, L.

Olson, C.
The production of silicon feedstock and wafers is energy intensive and the costs of the wafers are a significant part of the total module costs. The application of thinner wafers and cells is a way to an improved environmental profile (lower CO2 footprint and energy payback time) and save Si material costs. We present here the results of a successful processing run of more than 100 pieces of ~95 μm thin IBC cells using an industrial compatible process flow based on screen-printing, starting from 120 μm thick 6 inch n-type Cz diamond wire cut wafers. A selection of 60 thin cells (process based on homo-junctions and not fully optimized for this thickness) with an average conversion efficiency of 19.4 % was made for integration in a full sized 60 cells module applying our foil based back contact module interconnection technology using dedicated industrial equipment and standard Bill of Materials (BoM) including electrically conductive adhesives. The module was made without any breakage of cells and revealed a total power output of 277 W, corresponding to a Cellto-Module (CtM) power loss of < 1 %. Electroluminescence spectroscopy revealed only minor issues in terms of micro
crack formation, demonstrating the full compatibility of the back contact module configuration with thin back-contacted cells.
TNO Identifier
842205
Repository link
https://resolver.tno.nl/uuid:9dc1b395-73f7-4485-92ce-393a90406f6c
ISSN
0094243X
ISBN
9780735417151
Publisher
American Institute of Physics Inc.
Article nr.
080002
Source title
SiliconPV 2018: The 8th International Conference on Crystalline Silicon Photovoltaics. 19 March 2018 through 21 March 2018
Editor(s)
Brendel, R.
Poortmans, J.
Weeber, A.
Hahn, G.
Ballif, C.
Glunz, S.
Ribeyron, P.J.
Pages
1-6
Files
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