Shot-noise limited throughput of soft X-ray ptychography for nanometrology applications
conference paper
Due to its potential for high resolution and three-dimensional imaging, soft X-ray ptychography has received interest for nanometrology applications. We have analyzed the measurement time per unit area when using soft X-ray ptychography for various nanometrology applications including mask inspection and wafer inspection, and are thus able to predict (order of magnitude) throughput figures. Here we show that for a typical measurement system, using a typical sampling strategy, and when aiming for 10-15 nm resolution, it is expected that a wafer-based topology (2.5D) measurement takes approximately 4 minutes per μm2, and a full three-dimensional measurement takes roughly 6 hours per μm2. Due to their much higher reflectivity EUV masks can be measured considerably faster; a measurement speed of 0.1 seconds per μm2 is expected. However, such speeds do not allow for full wafer or mask inspection at industrially relevant throughput.
TNO Identifier
788786
ISSN
0277786X
ISBN
9781510616622
Publisher
SPIE
Article nr.
1058533
Source title
Metrology, Inspection, and Process Control for Microlithography XXXII, San Jose, CA, USA, 26 February - 1 March 2018
Editor(s)
Ukraintsev, V.A.
Adan, O.
Adan, O.
Collation
9 p.
Files
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